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| jmnic product specification silicon pnp power transistors 2SB1009 description ? ? with to-126 package ? complement to type 2sd1380 applications ? for use in low frequency power amplifier applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -40 v v ceo collector-emitter voltage open base -32 v v ebo emitter-base voltage open collector -5 v i c collector current (dc) -2 a t a =25 ?? 0.1 p d total power dissipation t c =25 ?? 10 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
jmnic product specification 2 silicon pnp power transistors 2SB1009 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-10ma ;i b =0 -32 v v cesat collector-emitter saturation voltage i c =-2.0a; i b =-0.2a -0.8 v v besat base-emitter saturation voltage i c =-2.0a ;i b =-0.2a -2.0 v i cbo collector cut-off current v cb =-20v; i e =0 -1 | a i ebo emitter cut-off current v eb =-3v; i c =0 -1 | a h fe-1 dc current gain i c =-20ma ; v ce =-5v 40 h fe-2 dc current gain i c =-500ma ; v ce =-5v 82 390 f t transition frequency i c =-500ma ; v ce =-5v 100 mhz c ob collector output capacitance f=1mhz ; v cb =-10v 50 pf jmnic product specification 3 silicon pnp power transistors 2SB1009 package outline fig.2 outline dimensions |
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